It is learnt that the R&D lab will be further supported by Navitas’ own unique EV System Design Centre, which is located in Shanghai. Engineers and system design teams from both companies will work in the lab with advanced power system design tools.
Mr Shuibao Guo, Vice GM, VREMT and Mr Charles Zha, VP & GM, Navitas China recently opened this joint lab in Ningbo, China.
Navitas’ GaNFast (gallium nitride, GaN) power ICs and GeneSiC (silicon carbide, SiC) power MOSFETs and diodes will be utilized for this purpose. VREMT, a leading electric powertrain supplier, and Navitas Semiconductor jointly announced the opening of an advanced R&D power semiconductor laboratory to accelerate EV power-system developments.
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